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1

47-Stage P-MOS Ring Oscillator Circuit Using the Two-Photomask Fabrication Process

Shohno, Katsufusa, Callanan, Kathleen J., Hirayama, Makoto

Journal:

Japanese Journal of Applied Physics

Year:

1978

File:

PDF, 302 KB

1978

2

Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH 3 -B 2 H 6 -H 2 System

Takigawa, Mitsuharu, Hirayama, Makoto, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1973

File:

PDF, 827 KB

1973

3

Free Boron Monophosphide Wafers

Suzuki, Akiyoshi, Takigawa, Mitsuharu, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1977

Language:

english

File:

PDF, 482 KB

english, 1977

4

Dielectric Constant and Refractive Index of Boron Monophosphide

Takenaka, Takao, Takigawa, Mitsuharu, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1976

File:

PDF, 222 KB

1976

5

Cross-Over Interconnections in P-MOS Integrated Circuits Using Two-Photomask Process

Hirayama, Makoto, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1977

Language:

english

File:

PDF, 341 KB

english, 1977

6

Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B 2 H 6 -PH 3 -H 2 System

Takigawa, Mitsuharu, Hirayama, Makoto, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1974

File:

PDF, 926 KB

1974

7

Gate Controlled Si PIN-Structure

Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1966

Language:

english

File:

PDF, 726 KB

english, 1966

8

Hardness of Boron Monophosphide

Takenaka, Takao, Takigawa, Mitsuharu, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 671 KB

english, 1976

9

Crystalline properties of BP epitaxially grown on Si substrates using B2H6-PH3-H2 system

Yutaka Hirai, Katsufusa Shohno

Journal:

Journal of Crystal Growth

Year:

1977

Language:

english

File:

PDF, 792 KB

english, 1977

10

Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH 3 -B 2 H 6 -H 2 System

Hirayama, Makoto, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1973

File:

PDF, 533 KB

1973

11

Boron Diffusion into Si from CVD-BN Covered with Si[sub 3]N[sub 4] and Application to Master Slice p-MOS IC

Shohno, Katsufusa

Journal:

Journal of The Electrochemical Society

Year:

1980

Language:

english

File:

PDF, 622 KB

english, 1980

12

Dielectric Constant of PbTe

Kanai, Yasuo, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1963

File:

PDF, 690 KB

1963

13

Double-Layer Epitaxial Growth of Si and B 13 P 2 on Si Substrates and Some Electrical Properties of Si Layers

Takenaka, Takao, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1974

File:

PDF, 589 KB

1974

14

A P-Channel MOS IC for Educational Purposes Using a Two-Photomask Process

Shohno, Katsufusa, Callanan, K. J.

Journal:

IEEE Transactions on Education

Year:

1977

Language:

english

File:

PDF, 3.84 MB

english, 1977

15

Dielectric Constant of PbTe

Kanai, Yasuo, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1962

File:

PDF, 105 KB

1962

16

Hardness of Epitaxially Grown Rhombohedral Boron Phosphide

Takigawa, Mitsuharu, Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1977

Language:

english

File:

PDF, 545 KB

english, 1977

17

Infrared Absorption of Si Oxide Films Made by Oxidation of Silane

Shohno, Katsufusa

Journal:

Japanese Journal of Applied Physics

Year:

1967

Language:

english

File:

PDF, 455 KB

english, 1967

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